Electrical and optical control of single spins integrated in scalable semiconductor devices
Abstract
Solid-state defects hold great promise as the building blocks for quantum computers. Most research has focused on defects in diamond, which are difficult to integrate with existing semiconductor technologies. An alternative two-vacancy neutral defect in silicon carbide (SiC) has a long coherence time but suffers from broad optical linewidths and charge instability. Anderson et al. fabricated these defects in a diode made out of commercially available SiC. Reverse voltage created large electric fields within the diode, tuning the frequencies of the defect's transitions by hundreds of gigahertz. The electric fields also caused charge depletion, leading to a dramatic narrowing of the transitions. The technique should be readily generalizable to other quantum defects.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 06, 2019
- Source ID
- 10.1126/science.aax9406
Entities
People
- Alexander L Crook
- Alexandre Bourassa
- Christopher P Anderson
- David Awschalom
- Gary Wolfowicz
- Hiroshi Abe
- Jawad ul Hassan
- Kevin C Miao
- Nguyen Tien Son
- Peter J Mintun
- Takeshi Ohshima
Organizations
- Air Force Office of Scientific Research
- Argonne National Laboratory
- Carl Trygger Foundation
- Japan Society for the Promotion of Science
- Knut and Alice Wallenberg Foundation
- Linköping University
- National Institute of Radiological Sciences
- National Science Foundation
- Office of Naval Research
- Swedish Energy Agency
- Swedish Research Council
- University of Chicago