Intrinsic quantized anomalous Hall effect in a moiré heterostructure

Abstract

Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi 2 Se 3 doped with magnetic atoms. The doping, however, introduces inhomogeneity, reducing the temperature at which the effect occurs. Two groups have now observed quantum anomalous Hall effect in intrinsically magnetic materials (see the Perspective by Wakefield and Checkelsky). Serlin et al. did so in twisted bilayer graphene aligned to hexagonal boron nitride, where the effect enabled the switching of magnetization with tiny currents. In a complementary work, Deng et al. observed quantum anomalous Hall effect in the antiferromagnetic layered topological insulator MnBi 2 Te 4 .

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 21, 2020
Source ID
10.1126/science.aay5533

Entities

People

  • Andrea Young
  • Charles Tschirhart
  • Hryhoriy Polshyn
  • Junqin Zhu
  • Kenji Watanabe
  • Leon Balents
  • M. Serlin
  • Takashi Taniguchi
  • Yuxuan Zhang

Organizations

  • Air Force Office of Scientific Research
  • Army Research Office
  • National Institute for Materials Science
  • United States Department of Energy
  • University of California

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing