Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films
Abstract
Dielectric capacitors are vital components of electronics and power systems. The thin-film materials of which capacitors are composed are usually optimized by changing the material composition. However, Kim et al. found that postprocessing an already effective thin-film dielectric by high-energy ion bombardment further improved the material because of the introduction of specific types of defects that ultimately improved the energy storage performance. The results suggest that postprocessing may be important for developing the next generation of capacitors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 03, 2020
- Source ID
- 10.1126/science.abb0631
Entities
People
- Alexander Qualls
- David Garcia
- Eric Parsonnet
- Gabriel Velarde
- Jieun Kim
- Lane W Martin
- Megha Acharya
- Patrick Donahue
- Sahar Seremi
Organizations
- Army Research Office
- Intel Corporation
- Kwanjeong Educational Foundation
- Lawrence Berkeley National Laboratory
- National Science Foundation
- United States Department of Energy
- University of California