Interfacial ferroelectricity by van der Waals sliding
Abstract
Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 25, 2021
- Source ID
- 10.1126/science.abe8177
Entities
People
- Eran Sela
- Iftach Nevo
- Kenji Watanabe
- Maayan Vizner Stern
- Michael Urbakh
- Moshe Ben Shalom
- Oded Hod
- Takashi Taniguchi
- Wei Cao
- Yuval Waschitz
Organizations
- Army Research Office
- Core Research for Evolutional Science and Technology
- Horizon 2020
- Israel Science Foundation
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
- Ministry of Science and Technology
- Tel Aviv University