Dielectric properties of amorphous Bi–Ti–O thin films
Abstract
We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2021
- Source ID
- 10.1142/s2010135x21500090
Entities
People
- R. B. van Dover
- Rui Sun
- Wenbin Xu
Organizations
- Air Force Office of Scientific Research
- Cornell University