Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2018
- Source ID
- 10.1149/2.0131802jss
Entities
People
- A. Y. Polyakov
- Chien-fong Lo
- Fan Ren
- I. V. Shchemerov
- J. W. Johnson
- Jiancheng Yang
- N. B. Smirnov
- Oleg Laboutin
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- Ministry of Education and Science of the Russian Federation