Development of Process Recipes for Maximum Mask Etch Selectivity and Maximum Etch Rate Having Vertical Sidewalls for Deep, Highly-Anisotropic Inductively-Coupled Plasma (ICP) Etching of Fused Silica
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2017
- Source ID
- 10.1149/2.0191709jss
Entities
People
- Michael B Pedersen
- Michael Huff