Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2016
Source ID
10.1149/2.0221612jss

Entities

People

  • C.-h. Won
  • Hyunho Jung
  • J.-h. Lee
  • J.-w. Lim
  • M. J. Shin
  • Maruf Bhuiyan
  • S.-j. Chang
  • T. P. Ma

Organizations

  • Division of Materials Research
  • Electronics and Telecommunications Research Institute
  • Ministry of Science, ICT and Future Planning
  • Office of Naval Research