Electrical Properties of Bulk, Non-Polar, Semi-Insulating M-GaN Grown by the Ammonothermal Method

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2018
Source ID
10.1149/2.0221805jss

Entities

People

  • A. Y. Polyakov
  • D. Gogova
  • I. V. Shchemerov
  • In‐Hwan Lee
  • N. B. Smirnov
  • Stephen Pearton
  • С. А. Тарелкин

Organizations

  • Defense Threat Reduction Agency
  • Ministry of Education and Science of the Russian Federation
  • National Research Foundation of Korea

Tags

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene