Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2019
Source ID
10.1149/2.0421907jss

Entities

People

  • Akito Kuramata
  • Chin-wei Chang
  • Fan Ren
  • Jenshan Lin
  • Jiancheng Yang
  • Marko J. Tadjer
  • Stephen Pearton
  • Yen-ting Chen
  • Yu-Te Liao

Organizations

  • National Science Foundation
  • National Science and Technology Council
  • Office of Naval Research
  • Office of Naval Research Global
  • United States Department of Defense