Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers
Abstract
We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm−2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 05, 2020
- Source ID
- 10.1149/2162-8777/ab902b
Entities
People
- A. Ruzin
- Fan Ren
- Igor Lubomirsky
- Leonid Chernyak
- Minghan Xian
- Sergey Khodorov
- Stephen Pearton
- Sushrut Modak
Organizations
- Defense Threat Reduction Agency
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- NATO