Band Alignment of Al2O3 on α-(AlxGa1-x)2O3
Abstract
X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 01, 2022
- Source ID
- 10.1149/2162-8777/ac546f
Entities
People
- Aman Haque
- Anna Hassa
- Chaker Fares
- Fan Ren
- Holger von Wenckstern
- Marius Grundmann
- Nahid Sultan Al-Mamun
- Stephen Pearton
- Xinyi Xia
Organizations
- Defense Threat Reduction Agency
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- European Social Fund Plus