Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heterojunction Rectifiers and Ni/Au/Ga2O3 Schottky Rectifiers
Abstract
Neutrons generated through charge-exchange 9Be (p; ni) 9Be reactions, with energies ranging from 0–33 MeV and an average energy of ∼9.8 MeV were used to irradiate conventional Schottky Ga2O3 rectifiers and NiO/Ga2O3 p-n heterojunction rectifiers to fluences of 1.1–2.2 × 1014 cm−2. The breakdown voltage was improved after irradiation for the Schottky rectifiers but was highly degraded for their NiO/Ga2O3 counterparts. This may be a result of extended defect zones within the NiO. After irradiation, the switching characteristics were degraded and irradiated samples of both types could not survive switching above 0.7 A or 400 V, whereas reference samples were robust to 1 A and 1 kV. The carrier removal rate in both types of devices was ∼45 cm−1. The forward currents and on-state resistances were only slightly degraded by neutron irradiation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2023
- Source ID
- 10.1149/2162-8777/ace54e
Entities
People
- Chao-Ching Chiang
- Fan Ren
- Hsiao-Hsuan Wan
- Jian-Sian Li
- Jihyun Kim
- Stephen Pearton
- Xinyi Xia
Organizations
- Defense Threat Reduction Agency
- Division of Materials Research
- Korea Institute for Advancement of Technology
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea