Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type
Abstract
Advanced metal-oxide-semiconductor field effect transistors, MOSFETs, have shown increasing sensitivity to microelectronic reliability based degradation phenomena and in particular, to negative bias temperature instability, NBTI. Previously [1] we have reported on a methodology to extract three distinct components of NBTI; recoverable charge, RC (oxide traps which discharge once the gate bias is zero), field recoverable charge, FRC (switching traps which seemingly discharged under positive gate bias), and interface state charge, IS (associated with the breaking of silicon-hydrogen bonds at the interface and do not discharge in an experimental time frame for temperatures below 180° C). Here we will report new results for NBTI for different oxide types and thicknesses and we will expand the methodology to include positive bias temperature instability, PBTI, oxide charging caused by the application of large positive biases. Both NBTI and PBTI will be examined for both p-channel and n-channel MOSFETS for each oxide type and thickness, which requires the measurement to be made in both accumulation and inversion modes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2014
- Source ID
- 10.1149/ma2014-01/36/1395
Entities
People
- Camron Kouhestani
- Duc Nguyen
- Kenneth Kambour
- Roderick A.b. Devine