Current Transport in Graphene/Copper Hybrid Nano Ribbon Interconnect: A First Principle Study
Abstract
In search of emerging materials replacement of copper interconnect in nanometer CMOS technology nodes, graphene (G) and carbon nanotubes (CNT) have been studied intensively. There is also ongoing research to find hybrid materials, which can have better thermal and electrical conductivity [1]. Recently, reduction in temperature has been observed in graphene encapsulated copper wires [2]. It was argued that this excellent thermal property is inherent to copper not because of graphene. During graphene deposition process, Cu becomes annealed with larger grains. In addition, graphene works as a barrier layer for copper ion to diffuse into dielectric. Motivated by recent experiments we have studied theoretically G/Cu structure in bulk and in one-dimension (1D) as next generation wires for nano-electronic applications. Our purpose is to understand this structure and to study why it outperforms graphene only or Cu only interconnect. In this paper, we report density of states (DOS), current-voltage relation (I-V), and resistance (R) of G/Cu nano ribbon interconnect.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2016
- Source ID
- 10.1149/ma2016-02/37/2314
Entities
People
- Ashok Srivastava
- Ashwani K. Sharma
- Clay Mayberry
- K M Mohsin
- Md. S. Fahad