(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity
Abstract
A unique combination of high mobility, high velocity and high sheet density of the 2DEG formed in GaN-based heterostructures has enabled GaN-based HEMTs to be used in a wide range of applications from RF power amplifiers to efficient power converters. Today’s complex communication systems require transceivers to process RF signals efficiently with large bandwidth and high fidelity. While GaN-based HEMT technology has advanced to reach higher power densities, it has not fundamentally changed the power requirements for the linearity performance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2019
- Source ID
- 10.1149/ma2019-02/25/1171
Entities
People
- Andrea Arias
- Andrew Carter
- Berinder Brar
- Casey King
- Debdeep Jena
- Eric Regan
- Huili Grace Xing
- Joshua Bergman
- K. Shinohara
- M P Gomez
- Miguel Urteaga
- Moudud Islam
- Reet Chaudhuri
- Ryan Page