(Invited) GaN Power Electronics and Associated Fundamental Limits
Abstract
How does it impact the design principles of power electronics in ultra-wide bandgap semiconductors? What fundamentally different roles does a p-region play in a power electric device in comparison to a semi-insulating region, for example, in the popular GaN HEMT based power transistors? What are the practical fundamental limits for the unipolar devices such as Schottky Barrier Didoes without the help of p-type? What are the unique advantages a polar semiconductor family like GaN can offer? What is polarization doping and how is polarization-doping fundamentally different from impurity doping? I will reflect on our efforts in seeking answers to these questions in the past 20 years in GaN power electronic devices as well as realizing state-of-the-art devices; some example publications can be found in references 1-12.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 23, 2020
- Source ID
- 10.1149/ma2020-02241739mtgabs
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Kazuki Nomoto
- Wenshen Li