(Invited) Evaluation of 2" Power-Grade GaN Substrates Produced By the Near Equilibrium Ammonothermal (NEAT) Method
Abstract
This paper provides evaluation of 2" GaN substrates produced by the near equilibrium ammonothermal (NEAT) method. Ammonothermal growth is a proven method of producing low-dislocation GaN crystals with practical productivity. [1, 2] By choosing a near-equilibrium growth condition, consistent growth with maintained crystal quality has been achieved. [3] Several tens of bulk GaN crystals were grown simultaneously, yielding many 2" GaN substrates in one growth batch. Figure 1 is an example of bulk GaN crystals after shaping and Figure 2 is an example of 2" GaN wafer.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 23, 2020
- Source ID
- 10.1149/ma2020-02261805mtgabs
Entities
People
- Balaji Raghothamachar
- Benjamin Jordan
- Daryl Key
- Edward Letts
- Eric Shang
- Michael Dudley
- Tadao Hashimoto
- Yafei Liu