Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs
Abstract
As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 1998
- Source ID
- 10.1155/1998/21494
Entities
People
- D. K. Ferry
- Dragica Vasileska
- V. Kafedziski
- W. J. Gross
Organizations
- Arizona State University
- Office of Naval Research