The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique
Abstract
In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 1998
- Source ID
- 10.1155/1998/24073
Entities
People
- Christian A. Ringhofer
- Matthias K Gobbert
- Timothy S. Cale
Organizations
- Arizona State University
- Defense Advanced Research Projects Agency