Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers
Abstract
We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 1998
- Source ID
- 10.1155/1998/46360
Entities
People
- David K. Ferry
- Dragica Vasileska
- Paolo Bordone
- Terry Eldridge
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- MD Helicopters
- University of Modena and Reggio Emilia