Monte Carlo Simulations of High Field Transport in Electroluminescent Devices
Abstract
High field transport in phosphor materials is an essential element of thin film electroluminescent device performance. Due to the high accelerating fields in these structures (1–3 MV/cm), a complete description of transport under high field conditions utilizing information on the full band structure of the material is critical to understand the light emission process due to impact excitation of luminescent impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based on empirical pseudopotential calculations to study its effect on the high field energy distribution of conduction band electrons.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 1998
- Source ID
- 10.1155/1998/53546
Entities
People
- Manfred Dür
- Martin Reigrotzki
- Ronald Redmer
- Stephen M. Goodnick
Organizations
- Arizona State University
- Army Research Office
- University of Rostock