Simulation of Quantum-Dot Structures in Si/SiO2

Abstract

We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 1998
Source ID
10.1155/1998/89258

Entities

People

  • Minhan Chen
  • Wolfgang Porod

Organizations

  • Defense Advanced Research Projects Agency
  • University of Notre Dame

Tags

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots