2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices

Abstract

Using the finite element method, we investigate device applications of lateral resonant tunneling structures which consist of a transmission channel with attached resonators. Such structure exhibits resonance-antiresonance transmission features which may be engineered to achieve desired device properties. We show that the valley current can be reduced in such 2D lateral resonant tunneling devices, resulting in an improved current peak-to-valley ratio.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 1998
Source ID
10.1155/1998/97564

Entities

People

  • Craig S. Lent
  • Wolfgang Porod
  • Zhi-an Shao

Organizations

  • Office of Naval Research
  • University of Notre Dame

Tags

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology