Analytic I–V Model for Single-Electron Transistors
Abstract
We present an analytical model for the I–V characteristics of a single-electron transistor, which may be incorporated in a conventional circuit simulator, such as SPICE. Our model takes as its input the physical SET characteristics (capacitances and tunnel resistances, which may be determined experimentally), and it yields I–V curves which are in excellent agreement with the ones obtained from full-scale Monte Carlo simulations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2001
- Source ID
- 10.1155/2001/71879
Entities
People
- Wolfgang Porod
- Xiaohui Wang
Organizations
- Office of Naval Research
- University of Notre Dame