Photonic Integration on the Hybrid Silicon Evanescent Device Platform
Abstract
This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 09, 2008
- Source ID
- 10.1155/2008/682978
Entities
People
- Alexander W. Fang
- Brian R. Koch
- Di Liang
- Hsu-hao Chang
- Hui-wen Chen
- Hyundai Park
- John E. Bowers
- Matthew N. Sysak
- Richard N Jones
- Ying-hao Kuo
Organizations
- Defense Advanced Research Projects Agency
- Intel Corporation
- University of California, Santa Barbara