Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs
Abstract
We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2012
- Source ID
- 10.1155/2012/806253
Entities
People
- Danqiong Hou
- Griff L. Bilbro
- Robert J. Trew
Organizations
- North Carolina State University
- Office of Naval Research