Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor
Abstract
The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time. A corresponding increase in the emission intensity was measured from the fluorescent probe with the progression of the reaction. The fluorescence from the boronate probe was used as an indicator to confirm the detection of hydrogen peroxide. These results demonstrate the dynamic measurement capability of AlGaN/GaN high electron mobility transistor sensors in monitoring real-time reactions of reactive oxygen species such as hydrogen peroxide.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 17, 2020
- Source ID
- 10.1177/1535370220972030
Entities
People
- Benjamin Mcewen
- Emma Rocco
- F. Shahedipour-sandvik
- Isra Mahaboob
- Juan Melendez
- Kasey Hogan
- Nathaniel C Cady
- Roger J Reinertsen
Organizations
- SUNY Polytechnic Institute
- United States Army Research Laboratory