III/V silicon hybrid laser based on a resonant Bragg structure
Abstract
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2020
- Source ID
- 10.1364/ao.390522
Entities
People
- Abdelkrim El Amili
- Andrew L. Starbuck
- Andrew T. Pomerene
- Anthony L. Lentine
- Christina Dallo
- Christopher T. Derose
- Douglas C. Trotter
- Jordan Davis
- Myun Sik Kim
- Yeshaiahu Fainman
Organizations
- ARPA-E
- ASML (United States)
- Army Research Office
- Defense Advanced Research Projects Agency
- Honeywell Federal Manufacturing and Technologies (United States)
- National Nuclear Security Administration
- National Science Foundation
- Office of Naval Research
- Semiconductor Research Corporation