Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 01, 2017
Source ID
10.1364/oe.25.019343

Entities

People

  • Andrew Aragon
  • Arman Rashidi
  • Daniel Feezell
  • Mohsen Nami
  • Morteza Monavarian
  • Sang H. Oh
  • Steve P. Denbaars

Organizations

  • National Science Foundation
  • Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
  • United States Department of Defense