Heterogeneous photodiodes on silicon nitride waveguides
Abstract
Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2020
- Source ID
- 10.1364/oe.387939
Entities
People
- Andreas Beling
- Baiheng Chen
- Gabriele Navickaite
- Junyi Gao
- Kartik Srinivasan
- Keye Sun
- Linli Xie
- Michael Geiselmann
- Michael Zervas
- Nan Ye
- Qianhuan Yu
Organizations
- Air Force Office of Scientific Research
- Defense Advanced Research Projects Agency