Lateral bipolar junction transistor on a silicon photonics platform
Abstract
Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/μm, which is about 70 times better than existing literature.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 06, 2020
- Source ID
- 10.1364/oe.389213
Entities
People
- Aashu Jha
- Alexander N. Tait
- Bhavin J. Shastri
- Chaoran Huang
- Hooman Saeidi
- Paul Prucnal
- Siamak Abbaslou
- Simon Bilodeau
- Thomas Ferreira de Lima
Organizations
- National Science Foundation
- Office of Naval Research