Thermo-optic properties of silicon-rich silicon nitride for on-chip applications
Abstract
We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10−4 K-1. Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 10, 2020
- Source ID
- 10.1364/oe.396969
Entities
People
- A. Friedman
- Hani Nejadriahi
- Paul K. L. Yu
- Rajat Sharma
- Steve Pappert
- Yeshaiahu Fainman
Organizations
- National Science Foundation
- Office of Naval Research
- Office of Science