Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Abstract
We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was achieved with a reverse bias of -6 V. Carrier escape lifetimes due to carrier trapping in the quantum wells (QWs) were obtained from both simulation and experimental fitting, identifying carrier trapping as the major speed limiting factor in the InGaN/GaN MQW PDs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 27, 2020
- Source ID
- 10.1364/oe.399924
Entities
People
- Changmin Lee
- James S. Speck
- John E. Bowers
- Matthew S. Wong
- Shuji Nakamura
- Steven P. DenBaars
- Yi Chao Chow
- Yuh-Renn Wu
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- National Science and Technology Council
- Simons Foundation
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara