InP high power monolithically integrated widely tunable laser and SOA array for hybrid integration
Abstract
We present a monolithic InP-based photonic integrated circuit (PIC) consisting of a widely tunable laser master oscillator feeding an array of integrated semiconductor optical amplifiers that are interferometrically combined on-chip in a single-mode waveguide. We demonstrate a stable and efficient on-chip coherent beam combination and obtain up to 240 mW average power from the monolithic PIC, with 30–50 kHz Schawlow-Townes linewidths and >180 mW average power across the extended C-band. We also explored hybrid integration of the InP-based laser and amplifier array PIC with a high quality factor silicon nitride microring resonator. We observe lasing based on gain from the interferometrically combined amplifier array in an external cavity formed via feedback from the silicon nitride microresonator chip; this configuration results in narrowing of the Schawlow-Townes linewidth to ∼3 kHz with 37.9 mW average power at the SiN output facet. This work demonstrates a new approach toward high power, narrow linewidth sources that can be integrated with on-chip single-mode waveguide platforms for potential applications in nonlinear integrated photonics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 21, 2021
- Source ID
- 10.1364/oe.413434
Entities
People
- Abdullah Al Noman
- Andrew M. Weiner
- Cong Wang
- Daniel E Leaird
- David L. Mathine
- Fred Kish
- Gloria E. Hoefler
- Keith A. McKinzie
- Kyunghun Han
- Minghao Qi
- V. Lal
Organizations
- Birck Nanotechnology Center, Purdue University
- Defense Advanced Research Projects Agency
- Infinera
- North Carolina State University
- Purdue University