Room-temperature bandwidth of 2-μm AlInAsSb avalanche photodiodes
Abstract
We investigate the room-temperature bandwidth performance of AlInAsSb avalanche photodiodes under 2-μm illumination. Parameter characterization denotes RC-limited performance. While measurements indicate a maximum gain-bandwidth product of 44 GHz for a 60-μm-diameter device, we scale this performance to smaller device sizes based on the RC response. For a 15-μm-diameter device, we predict a maximum gain-bandwidth product of approximately 144 GHz based on the reported measurements.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 05, 2021
- Source ID
- 10.1364/oe.439240
Entities
People
- Andrew H. Jones
- Dekang Chen
- Joe C. Campbell
- Keye Sun
- Seth R. Bank
- Stephen D. March
- Yang Shen
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- University of Texas at Austin
- University of Virginia