Nano-porous GaN cladding and scattering loss in edge emitting laser diodes
Abstract
We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm-1. The considerable 60 cm-1 of excess loss of the nano-porous clad lasers is attributed to scattering at pores in unintentionally 3% porosified layers, supported by numerical modeling. Simulations comparing porous GaN cladding to AlInN cladding for lasers operating at 589 nm indicate that the porous cladding provides similar internal loss and lower thermal impedance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 12, 2022
- Source ID
- 10.1364/oe.445512
Entities
People
- Daniel Cohen
- Emily Trageser
- Haojun Zhang
- Nathan Palmquist
- Ryan Anderson
- Shuji Nakamura
- Steven P. DenBaars
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
- United States Department of Energy
- University of California