Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model
Abstract
We report the frequency response of Al0.3InAsSb/Al0.7InAsSb nBn photodetectors. The 3-dB bandwidth of the devices varies from ∼ 150 MHz to ∼ 700 MHz with different device diameters and saturates with bias voltage immediately after the device turn on. A new equivalent circuit model is developed to explain the frequency behavior of nBn photodetectors. The simulated bandwidth based on the new equivalent circuit model agrees well with the bandwidth and the microwave scattering parameter measurements. The analysis reveals that the limiting factor of the bandwidth of the nBn photodetector is the large diffusion capacitance caused by the minority carrier lifetime and the device area. Additionally, the bandwidth of the nBn photodetector is barely affected by the photocurrent, which is found to be caused by the barrier structure in the nBn photodetector.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 28, 2022
- Source ID
- 10.1364/oe.457057
Entities
People
- Adam A. Dadey
- Andrew H. Jones
- Bingtian Guo
- Dekang Chen
- J. Andrew McArthur
- Joe C. Campbell
- Keye Sun
- Seth R. Bank
- Yang Shen
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- National Science Foundation
- University of Texas at Austin
- University of Virginia