Optical bistability in PECVD silicon-rich nitride
Abstract
We present a study of optical bi-stability in a 3.02 refractive index at 1550nm plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) film, as it pertains to bi-stable switching, memory applications, and thermal sensing applications. In this work we utilize an SRN ring resonator device, which we first characterize at low-power and then compare thermo-optic coefficients, (2.12 ± 0.125) × 10−4/°C, obtained from thermal-heating induced resonance shifts to optically induced resonance shifts as well as estimated propagation loss and absorption. We then measure the time response of this nonlinearity demonstrating the relaxation time to be 18.7 us, indicating the mechanism to be thermal in nature. Finally, we demonstrate bi-stable optical switching.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 30, 2022
- Source ID
- 10.1364/oe.473928
Entities
People
- A. Friedman
- Andrew Grieco
- Dmitrii Belogolovskii
- Yeshaiahu Fainman
Organizations
- ARPA-E
- ASML (United States)
- Army Research Office
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of California, San Diego