Determination of the nonlinear thermo-optic coefficient of silicon nitride and oxide using an effective index method
Abstract
There is little literature characterizing the temperature-dependent thermo-optic coefficient (TOC) for low pressure chemical vapor deposition (LPCVD) silicon nitride or plasma enhanced chemical vapor deposition (PECVD) silicon dioxide at temperatures above 300 K. In this study, we characterize these material TOC’s from approximately 300-460 K, yielding values of (2.51 ± 0.08) · 10−5K−1 for silicon nitride and (5.67 ± 0.53) · 10−6K−1 for silicon oxide at room temperature (300 K). We use a simplified experimental setup and apply an analytical technique to account for thermal expansion during the extraction process. We also show that the waveguide geometry and method used to determine the resonant wavelength have a substantial impact on the precision of our results, a fact which can be used to improve the precision of numerous ring resonator index sensing experiments.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 05, 2022
- Source ID
- 10.1364/oe.477102
Entities
People
- Alexandria Mckinlay
- Andrew Grieco
- Cameron Horvath
- Dhaifallah Almutairi
- Jocelyn N. Westwood-bachman
- Karl Johnson
- Naif Alshamrani
- Yeshaiahu Fainman
Organizations
- ASML (United States)
- Army Research Office
- Defense Advanced Research Projects Agency
- King Abdulaziz City for Science and Technology
- National Science Foundation
- Office of Basic Energy Sciences
- Office of Naval Research
- University of California, San Diego