Wafer-scale heterogeneous integration of thin film lithium niobate on silicon-nitride photonic integrated circuits with low loss bonding interfaces
Abstract
Silicon nitride (Si3N4) is a versatile waveguide material platform for CMOS foundry-based photonic integrated circuits (PICs) with low loss and high-power handling. The range of applications enabled by this platform is significantly expanded with the addition of a material with large electro-optic and nonlinear coefficients such as lithium niobate. This work examines the heterogeneous integration of thin-film lithium-niobate (TFLN) on silicon-nitride PICs. Bonding approaches are evaluated based on the interface used (SiO2, Al2O3 and direct) to form hybrid waveguide structures. We demonstrate low losses in chip-scale bonded ring resonators of 0.4 dB/cm (intrinsic Q = 8.19 × 105). In addition, we are able to scale the process to demonstrate bonding of full 100-mm TFLN wafers to 200-mm Si3N4 PIC wafers with high layer transfer yield. This will enable future integration with foundry processing and process design kits (PDKs) for applications such as integrated microwave photonics and quantum photonics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 24, 2023
- Source ID
- 10.1364/oe.486944
Entities
People
- Dave Kharas
- Jason J. Plant
- Matthew Ricci
- P Juodawlkis
- Siddhartha Ghosh
- Siva Yegnanarayanan
Organizations
- Massachusetts Institute of Technology
- Northeastern University
- Office Of The Under Secretary Of Defense