High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization
Abstract
AlGaN-based UV-A LEDs have wide applications in medical treatment and chemical sensing; however, their efficiencies are still far behind visible LEDs or even shorter wavelengths UV-C counterparts because of the large lattice mismatch between the low-Al-content active region and the AlN substrate. In this report, we investigated the composition and thickness of the quantum barrier in the active region in terms of LED performance. Due to the improved strain management and better carrier confinement, efficient UV-A LEDs (320 nm - 330 nm) with EQEs up to 6.8% were demonstrated, among the highest efficiencies at this wavelength range.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 14, 2023
- Source ID
- 10.1364/oe.491622
Entities
People
- Hongjian Li
- James S. Speck
- Michael Iza
- Michael Lam
- Michael Yu Wang
- Panpan Li
- Shuji Nakamura
- Steven P. DenBaars
- Yifan Yao
Organizations
- Defense Advanced Research Projects Agency
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
- University of California