Subvolt electro-optical modulator on thin-film lithium niobate and silicon nitride hybrid platform
Abstract
A low voltage operation electro-optic modulator is critical for applications ranging from optical communications to an analog photonic link. This paper reports a hybrid silicon nitride and lithium niobate electro-optic Mach–Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light. The presented amplitude modulator with an interaction region length of 2.4 cm demonstrates a DC half-wave voltage of only 0.875 V, which corresponds to a modulation efficiency per unit length of 2.11 V cm. The power extinction ratio of the fabricated device is approximately 30 dB, and the on-chip optical loss is about 5.4 dB.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 19, 2020
- Source ID
- 10.1364/ol.381892
Entities
People
- Abu Naim R Ahmed
- Andrew Mercante
- Dennis W. Prather
- Peng Yao
- Sean Nelan
- Shouyuan Shi
Organizations
- Air Force Office of Scientific Research