40 Gbit/s waveguide photodiode using III–V on silicon heteroepitaxy
Abstract
Low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) are demonstrated by direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates. The PDs have a dark current of 0.1 µA at − 3 V bias and an internal (external) responsivity of 0.78 A/W (0.27 A/W). The 3 dB bandwidth is 28 GHz, and open eye diagrams are detected at 40 Gbit/s.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 19, 2020
- Source ID
- 10.1364/ol.392567
Entities
People
- Andreas Beling
- Daehwan Jung
- John E. Bowers
- Junyi Gao
- Keye Sun
Organizations
- Air Force Research Laboratory