Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches
Abstract
We report a new, to the best of our knowledge, type of SI-GaAs photoconductive semiconductor switch (PCSS) with nanostructures. Since light can enter from both the top and side surfaces of nanostructures, the effective penetration depth is significantly increased. Lower on-state resistance and a longer lock-on time have been achieved in the nonlinear mode with this design, as well as a lower triggering fluence in the linear mode. This could be highly useful for a variety of applications that require lower on-state resistance and/or longer lock-on time such as pulsed power systems and firing set switches.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 09, 2021
- Source ID
- 10.1364/ol.416662
Entities
People
- Annan Shang
- Chang-jiang Chen
- Ruijia Liu
- Shizhuo Yin
- Yun Goo Lee
Organizations
- Office of Naval Research
- Pennsylvania State University