High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm
Abstract
Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼ 850 m W in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 15, 2021
- Source ID
- 10.1364/ol.422536
Entities
People
- Aaron Stein
- Alexey Belyanin
- G. Kipshidze
- Gregory Belenky
- Jiang Jiang
- L. Shterengas
Organizations
- Army Research Office
- Brookhaven National Laboratory
- National Science Foundation
- Stony Brook University
- Texas A&M University
- United States Department of Energy