Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics
Abstract
We report normal-incidence planar GeSn resonant-cavity-enhanced photodetectors (RCE-PDs) with a lateral p - i - n homojunction configuration on a silicon-on-insulator (SOI) platform for short-wave infrared (SWIR) integrated photonics. The buried oxide of the SOI platform and the deposited S i O 2 layer serve as the bottom and top reflectors, respectively, creating a vertical cavity for enhancing the optical responsivity. The planar p - i - n diode structure is favorable for complementary-metal-oxide-semiconductor-compatible, large-scale integration. With the bandgap reduction enabled by the 4.2% Sn incorporation into the GeSn active layer, the photodetection range extends to 1960 nm. The promising results demonstrate that the developed planar GeSn RCE-PDs are potential candidates for SWIR integrated photonics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2021
- Source ID
- 10.1364/ol.427529
Entities
People
- Chen-yang Chang
- Greg Sun
- Guo-En Chang
- H. H. Cheng
- Kuo-chih Lee
- Radhika Bansal
- Richard Soref
Organizations
- Air Force Office of Scientific Research
- National Chung Cheng University
- National Science and Technology Council
- National Taiwan University
- University of Massachusetts Boston