Demonstration of the DC-Kerr effect in silicon-rich nitride
Abstract
We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, χ ( 3 ) , as high as ( 6 ± 0.58 ) × 10 − 19 m 2 / V 2 . We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a χ ( 3 ) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 25, 2021
- Source ID
- 10.1364/ol.432359
Entities
People
- A. Friedman
- Hani Nejadriahi
- Rajat Sharma
- Yeshaiahu Fainman
Organizations
- ARPA-E
- ASML (United States)
- Army Research Office
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of California