Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant
Abstract
Semiconductors such as InAs with high dopant concentrations have a variety of applications, including as components of mid-infrared optoelectronic devices. Unfortunately, growth of these materials by molecular beam epitaxy is challenging, requiring high growth rates and low growth temperatures. We show that the use of a bismuth surfactant improves silicon incorporation into InAs while simultaneously reducing the optical scattering rate, increasing the carrier mobility, reducing surface roughness, and enabling growth at higher substrate temperatures and slower growth rates. We explain our findings using microscopic theories of dopant segregation and defect formation in III-V materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2020
- Source ID
- 10.1364/ome.383260
Entities
People
- Dongxia Wei
- Patrick Sohr
- Scott Maddox
- Seth R. Bank
- Stephanie Law
Organizations
- Air Force Office of Scientific Research
- National Science Foundation Directorate for Mathematical & Physical Sciences