Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
Abstract
Silicon-tin (Si1-xSnx) films have been grown using plasma-enhanced chemical vapor deposition on Si (001) substrate. X-ray photoelectron spectroscopy characterization of the thin films show successful substitutional incorporation of Sn in Si lattice up to 3.2%. The X-ray diffraction characterizations show epitaxial growth of Si1-xSnx films (001) direction. The Sn incorporation has been measured using X-ray photoelectron spectrometry and the film uniformity was confirmed using energy dispersive X-ray spectrometry.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 24, 2020
- Source ID
- 10.1364/ome.398958
Entities
People
- Abbas Sabbar
- Aboozar Mosleh
- Hameed A. Naseem
- Huong Q Tran
- Joshua M. Grant
- Mehrshad Mehboudi
- Oluwatobi Olorunsola
- Seyedeh Fahimeh Banihashemian
- Shui-Qing Yu
- Solomon Ojo
- Sylvester Amoah
Organizations
- Air Force Office of Scientific Research